| T.R | Title | User | Personal
Name | Date | Lines |
|---|
| 35.1 | W-CMP MQC data sheet template | STRATA::KRUPA | | Wed Feb 26 1997 08:06 | 39 |
| $$$$$$$$$$$$$$$$$$$$ Date:
W-CMP MQC DATA SHEET Time:
$$$$$$$$$$$$$$$$$$$$ Name:
-> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = ___________
Tungsten %Standard Deviation = ___________
Tungsten Range = ___________
Oxide removal rate(Ang/min) = ___________
Oxide %Standard Deviation = ___________
Oxide Range = ___________
Selectivity W:Oxide = W-RR/OxRR = __________
-> Secondary Platen Difference Map(2 minute polish):
Oxide removal rate(Ang/min) = ___________
Oxide Standard Deviation = ___________
Oxide Range = ___________
Defectivity: Pre Post Delta
Sum of all Defects = _______ _______ _______
Large(0.7-10um) = _______ _______ _______
Scratch Length(mm) = _______ _______ _______
-> Integrated Process(Primary to endpoint + Secondary Buff)
Defectivity: Pre Post Delta
Sum of all Defects = _______ _______ _______
Large(0.7-10um) = _______ _______ _______
Scratch Length(mm) = _______ _______ _______
Wafer counts: Primary Table=
Secondary Table=
Notes/Comments:
|
| 35.2 | CMP.C1 MQC 2-27-97 | FABSIX::E_DAWSON | | Thu Feb 27 1997 15:30 | 38 |
| $$$$$$$$$$$$$$$$$$$$ Date: 2-27-97
W-CMP MQC DATA SHEET Time: 15:26
$$$$$$$$$$$$$$$$$$$$ Name: Earl Dawson
-> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = 2361_______
Tungsten %Standard Deviation = 6.667______
Tungsten Range = 315________
Oxide removal rate(Ang/min) = 9.6_______ (one minute)
Oxide %Standard Deviation = 9.5________
Oxide Range = 39.4_______
Selectivity W:Oxide = W-RR/OxRR = 246_______
-> Secondary Platen Difference Map(2 minute polish):
Oxide removal rate(Ang/min) = 2490_______
Oxide Standard Deviation = 180________
Oxide Range = 572________
Defectivity: Pre Post Delta
Sum of all Defects = __na___ 2490___ na_____
Large(0.7-10um) = __na___ 180____ na_____
Scratch Length(mm) = __na ___ 4.55___ na_____
-> Integrated Process(Primary to endpoint + Secondary Buff)
Defectivity: Pre Post Delta
Sum of all Defects = na_____ 2468___ na_____
Large(0.7-10um) = na_____ 666____ na_____
Scratch Length(mm) = na_____ 0______ na_____
Wafer counts: Primary Table= ?
Secondary Table= ?
Notes/Comments:
|
| 35.3 | CMP.C1 MQC 2-28-97 | FABSIX::E_DAWSON | | Fri Feb 28 1997 09:58 | 39 |
| $$$$$$$$$$$$$$$$$$$$ Date: 2-28-97
W-CMP MQC DATA SHEET Time: 09:51
$$$$$$$$$$$$$$$$$$$$ Name: earl dawson
-> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = na_________
Tungsten %Standard Deviation = na_________
Tungsten Range = na_________
Oxide removal rate(Ang/min) = na_________
Oxide %Standard Deviation = na_________
Oxide Range = na_________
Selectivity W:Oxide = W-RR/OxRR = na________
-> Secondary Platen Difference Map(2 minute polish):
Oxide removal rate(Ang/min) = 1269_______
Oxide Standard Deviation = 189________
Oxide Range = 809________
Defectivity: Pre Post Delta
Sum of all Defects = 56_____ _3932__ _3876__
Large(0.7-10um) = _9_____ _284___ _275___
Scratch Length(mm) = _0_____ __13___ _13____
-> Integrated Process(Primary to endpoint + Secondary Buff)
Defectivity: Pre Post Delta
Sum of all Defects = na_____ 7169___ _______
Large(0.7-10um) = na_____ 1713 __ _______
Scratch Length(mm) = na_____ ___0___ _______
Wafer counts: Primary Table=
Secondary Table=
Notes/Comments:
|
| 35.4 | IONIC CONTAMINATION TEST | FABSIX::E_DAWSON | | Fri Feb 28 1997 15:52 | 18 |
|
run W-Over- ~500A Scrub
# PolTime OxBuff NH4OH
--- ------- ------ -----
DELTA
1 none none yes D W# MK2LR32 10-55-0 -> scrub control #1
2 none yes yes D W# MD2LRA2 0-8-0 -> oxide pad control
3 30s no no D W# KP0VW22 +120000 MAXED
4 30s yes no D W# KU0VW22 5873-16962-13
5 90s yes no D W# KS0VW42 699-1838-0
6 30s no yes D W# KF0VYF2 +120000 MAXED
7 30s yes yes D W# K30UWTZ 475-1847-1.01
8 60s yes yes SCRATCH
9 90s yes yes D W# KL0WAZ 869-2851-11.3
10 none none yes D (NO BARCODE) 1322-7560-0 -> scrub control #2
-- none none none D (NO BARE CODE) -> oxide control
|
| 35.5 | W-PAD TEST | FABSIX::E_DAWSON | | Wed Mar 05 1997 13:32 | 40 |
|
TEST WAS RUN ON 3-1-97
~35W ON THE PAD
MIXED 20 LITERS OF W-SLURRY
SLURRY FLOWED FOR 2 MIN
POLYTEX# RECIPE USED
ZEROED OUT ALL THE TIMES FOR THE FINAL TABLE
FINAL TABLE TIMES ARE 15 SEC, 2:00 MIN, 15 SEC, 15 SEC,5 SEC /5 PHASES
BREAKIN WAFER RAN 2 MIN / NO BUFF
WCMP MQC 2 MIN / NO BUFF, LOT PF0002
4957� / 2 MIN = 2479� A MIN, RANGE = 178� STD% = 3.59%
20 OXIDE MONITORS RUN
WCMP MQC 2 MIN / NO BUFF LOT PF0002
5777� / 2 MIN = 2889� MIN, RANGE = 541�, STD% = 9.4%
~58W ON THE PAD
20 OXIDE MONITORS RUN....MIXED 20 MORE LITERS OF W-SLURRY
WCMP MQC 2 MIN / NO BUFF, LOT PF0002
5545� / 2 MIN = 2773� MIN, RANGE = 570�, STD% = 10.3%
~79W ON THE PAD
15 OXIDE MONITORS RUN...RAN OUT OF SLURRY
WCMP MQC 2MIN / NO BUFF, LOT PF0002
5723� /2 MIN = 2862� MIN, RANGE = 389�, STD% = 6.79%
~99W ON THE PAD
- FLUSHED TANK & LINES. REPLACED W-SLURRY FILTER WITH NEW ONE.
MISC.
----
- Noticed slurry settling at the bottom of the W-tank and bottom of the
W-filter. Milky white, may I assume this is the Biplanar W-Slurry?
- Tool ran great all day!
|
| 35.6 | CMP.C1 MQC'S 3-5-97 | FABSIX::E_DAWSON | | Wed Mar 05 1997 17:20 | 69 |
| W-CMP MQC DATA SHEET Date: 3-5-97
Time: 13:40
Name: Earl Dawson
*** First Set ***
-> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = 2077_______
Tungsten %Standard Deviation = 14.2_______
Tungsten Range = 1626_______
*** Second Set ***
-> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = 2558_______
Tungsten %Standard Deviation = 11.5_______
Tungsten Range = 2048_______
*** Third Set ***
-> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = 2350___
Tungsten %Standard Deviation = 10.8___
Tungsten Range = 1492___
*** TIGHTEN CARRIER BOLTS
*** Fourth Set ***
-> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = 2235__
Tungsten %Standard Deviation = 15.6%_
Tungsten Range = 1795__
*** SPINDLE SPEED @ 90 RPM
*** Fifth Set ***
> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = 2283 __
Tungsten %Standard Deviation = 10.3 _
Tungsten Range = 1705 __
*** AJUSTED CARRIER TO 8.0 TO 8.5 MILS
*** SIXTH SET ***
> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = 2284 __
Tungsten %Standard Deviation = 7.115 _
Tungsten Range = 1111 __
**** CARRIER SPEED @31 RPM
-> Secondary Platen Difference Map(2 minute polish):
Oxide removal rate(Ang/min) = 1161_______
Oxide Standard Deviation = 7.0%_______
Oxide Range = 388________
Defectivity: Pre Post Delta
Sum of all Defects = 110____ 21_____ -89____
Large(0.7-10um) = 738____ 140____ -598___
Scratch Length(mm) = 0______ 3.7mm__ 3.77mm_
Wafer counts: Primary Table=
Secondary Table=
Notes/Comments:
|
| 35.7 | PAD TEST DATA 3-6-97 | FABSIX::E_DAWSON | | Thu Mar 06 1997 14:47 | 23 |
|
- GAVE W-SLURRY TANK A STIR PRIOR TO RUNNING.
- RAN TWO W-MONITORS BREAKINS FOR 4 MINUTES A WAFER.
- POLYTEX# RECIPE USED
- AJUSTMENTS PSI IN PHASE TWO ONLY, AJUSTED SPEEDS IN PHASES ONE - THREE.
- CLICKING SOUND COMING OFF OF THE CARRIER .
-
run# table carrier press W-rem W-%std range C/E
speed speed psi rate dev fast
---- ----- ------- ----- ----- ------ ----- ----
1 45 90 4.6 D 2018 11.0 1800 C WAFER STUCK
2 45 30 4.6 D 2615 3.36 708 E WAFER STUCK
3 15 30 6.0 D 1308 6.17 640 C NO STICK
4 15 30 4.6 D 1045 7.77 722 C NO STICK
5 30 60 5.3 D 2045 9.81 1346 C WAFER STUCK
6 15 90 4.6 D 1674 7.78 886 E NO STICK
7 15 90 6.0 D 1675 6.02 780 E NO STICK
8 45 90 6.0 D 3054 6.94 1443 C NO STICK
9 45 30 6.0 D 3118 9.17 2278 E NO STICK
10 30 60 5.3 D 2126 6.57 1059 C WAFER STUCK
|
| 35.8 | CMP.C1 MQC'S 3-6-97 | FABSIX::E_DAWSON | | Thu Mar 06 1997 15:36 | 39 |
| W-CMP MQC DATA SHEET Date: 3-6-97
Time: 15:30
Name: Earl Dawson
-> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = 2573
Tungsten %Standard Deviation = 6.55
Tungsten Range = 1378
Oxide removal rate(Ang/min) = na
Oxide %Standard Deviation = na
Oxide Range = na
Selectivity W:Oxide = W-RR/OxRR =
-> Secondary Platen Difference Map(2 minute polish):
Oxide removal rate(Ang/min) = 1168
Oxide Standard Deviation = 8.26
Oxide Range = 965
Defectivity: Pre Post Delta
Sum of all Defects = 16 811 795
Large(0.7-10um) = 204 2062 1858
Scratch Length(mm) = 0 0 0
-> Integrated Process(Primary to endpoint + Secondary Buff)
Defectivity: Pre Post Delta
Sum of all Defects = 26
Large(0.7-10um) = 121
Scratch Length(mm) = 0
Wafer counts: Primary Table= na
Secondary Table= na
Notes/Comments:
SCRUBBER MQC'S 20 OXIDE WAFERS RUN PRIOR TO CHECK
PRE 2-12-0
PST 18-216-0
DELTA 16-204-0
|
| 35.9 | CMP.C1 MQC 3-7-97 | FABSIX::E_DAWSON | | Sat Mar 08 1997 14:54 | 37 |
|
W-CMP MQC DATA SHEET Date: 3-7-97
Time: na
Name: Earl Dawson
-> Primary Platen Difference Maps(2 minute polish): "Center Heavy"
Tungsten removal rate(Ang/min) = 3175�
Tungsten %Standard Deviation = 4.78%
Tungsten Range = 1201�
Oxide removal rate(Ang/min) = 21�
Oxide %Standard Deviation = 13�
Oxide Range = 63�
Selectivity W:Oxide = W-RR/OxRR = 159�
-> Secondary Platen Difference Map(2 minute polish):
Oxide removal rate(Ang/min) = 1060�
Oxide Standard Deviation = 217�
Oxide Range = 770
Defectivity: Pre Post Delta
Sum of all Defects = 7 536 529
Large(0.7-10um) = 3 132 129
Scratch Length(mm) = 0 0 0
-> Integrated Process(Primary to endpoint + Secondary Buff)
Defectivity: Pre Post Delta
Sum of all Defects = NA 2715 NA
Large(0.7-10um) = NA 640 NA
Scratch Length(mm) = NA 2.03 NA
Wafer counts: Primary Table = NA
Secondary Table = NA
Notes/Comments:
|
| 35.10 | SUBA V MQC'S 3-8-97 | FABSIX::E_DAWSON | | Sat Mar 08 1997 15:15 | 40 |
|
**** SUBA V / PRIMARY PAD MQC'S
W-CMP MQC DATA SHEET Date: 3/8/97
Time: 15:00
Name: Earl Dawson
-> Primary Platen Difference Maps(2 minute polish): "Center Fast"
Tungsten removal rate(Ang/min) = 3554� * VIBRATIONS *
Tungsten %Standard Deviation = 10.59% / 376�
Tungsten Range = 1316�
Oxide removal rate(Ang/min) = 13� Pst Part = 481-8150-2.32
Oxide %Standard Deviation = 4� The whole wafer measured.
Oxide Range = 21�
"NO VIBRATION"
Selectivity W:Oxide = W-RR/OxRR = 273�
-> Secondary Platen Difference Map(2 minute polish):
Oxide removal rate(Ang/min) = 1010�
Oxide Standard Deviation = 244�
Oxide Range = 977�
Defectivity: Pre Post Delta
Sum of all Defects = 8 2142 2136
Large(0.7-10um) = 6 298 292
Scratch Length(mm) = 0 0 0
-> Integrated Process(Primary to endpoint + Secondary Buff) (*2 MIN BUFF*)
Defectivity: Pre Post Delta
Sum of all Defects = na 147 na
Large(0.7-10um) = na 298 na
Scratch Length(mm) = na 0 na
* VIBRATIONS *
Wafer counts: Primary Table = na
Secondary Table = na
Notes/Comments:
* TWO OXIDE WAFERS RUN PRIOR TO MQC'S ON PRIMARY PAD AND NO
VIBRATION EXPIRENCED.
|
| 35.11 | SUBA V PAD TEST RESULTS | FABSIX::E_DAWSON | | Sat Mar 08 1997 15:16 | 28 |
|
- PAD REMOVED, SUBA V PAD INSTALLED
- W-SLURRY TANK STIRED, COLOR SEEMS TO GET A LITTLE WHITER. (ie. ALUMINA
SETTLING AT THE BOTTOM OF THE TANK)
- W-SLURRY FLOWED FOR ~2 MINUTES
- 4 W MONIITORS RAN @ 2 MINUTES.
- VIBRATION NOTICED FIRST TWO RUNS.
- LAST TWO RUNS TIME INCREASED TO 4 MINUTES.
- PHASE ONE AND TWO T/C CHANGED TO MATCH TEST.
- PHASE 3 T/C LEFT AT 17/61.
- ONLY PHASE 2 PSI CHANGED TO MATCH TEST.
- FULL MQC'S PERFORMED, SEE NOTE 35 FOR DETAILS. THIS WAS RUN ON THE
ORIGINAL POLYTEX# RECIPE.
run# table carrier press W-rem W-%std range C/E
speed speed psi rate dev fast VIBRATION
---- ----- ------- ----- ----- ------ ----- ---- -----------
1 45 90 4.6 D 1581 19.2 1882 C VIBRATION
2 45 30 4.6 D 1434 17.9 1588 C VIBRATION
3 15 30 6.0 D 686 13.5 682 C MAGOR VIBRATION
4 15 30 4.6 D 486 17.8 598 C MAGOR VIBRATION
5 30 60 5.3 D 1617 12.8 1244 E VIBRATION
6 15 90 4.6 D 1665 10.1 1140 E NO VIBRATION
7 15 90 6.0 D 1456 2.68 265 C NO VIBRATION
8 45 90 6.0 D 2194 14.7 2008 C VIBRATION
9 45 30 6.0 D 2126 10.9 1547 C MAGOR VIBRATION
10 30 60 5.3 D 1588 13.3 1443 C VIBRATION
|
| 35.12 | CMP-SCRUB.C1 MQC'S 3-6-97 | FABSIX::E_DAWSON | | Sat Mar 08 1997 15:30 | 7 |
|
SCRUBBER MQC'S 3-6-97
PRE 2-12-0
PST 18-216-0
DELTA 16-204-0
|
| 35.13 | CMP.C1 SLURRY TANKS | FABSIX::E_DAWSON | | Sat Mar 08 1997 16:31 | 10 |
|
Tungsten and Oxide slurry tanks both drained, cleaned and DI water
cycled through lines. Both filters removed and cleaned w/DI water and
installed back on pumps. Tool is currently cycling DI.
Tungsten Slurry tank and filter housing have slurry (planar-alumina)
settling at the bottom.
Tool has a SUBAV pad installed on it.
|
| 35.14 | PAD CHANGE 3-12-97 | FABSIX::E_DAWSON | | Wed Mar 12 1997 11:05 | 8 |
|
Installed new pads on CMP.C1
Lot # :
Primary pad = PANW #91231
Secondary pad = POLYTEX #6BK-EC5E
ed
|
| 35.15 | CMP.C1 MQC DATA 3-12-97 | FABSIX::E_DAWSON | | Wed Mar 12 1997 12:30 | 36 |
| W-CMP MQC DATA SHEET Date: 3-12-97
Time: 12:15 hrs
Name: Earl Dawson
-> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = 2476
Tungsten %Standard Deviation = 5.8% - 287�
Tungsten Range = 1147�
Oxide removal rate(Ang/min) = 10
Oxide %Standard Deviation = 11
Oxide Range = 51
Selectivity W:Oxide = W-RR/OxRR = 248
-> Secondary Platen Difference Map(2 minute polish):
Oxide removal rate(Ang/min) = 1389
Oxide Standard Deviation = 5.3% - 258�
Oxide Range = 1125
Defectivity: Pre Post Delta
Sum of all Defects = 176
Large(0.7-10um) = 40
Scratch Length(mm) = 0
-> Integrated Process(Primary to endpoint + Secondary Buff)
Defectivity: Pre Post Delta
Sum of all Defects = 284
Large(0.7-10um) = 69
Scratch Length(mm) = 0
Wafer counts: Primary Table = 10 wafers
Secondary Table = 10 wafers
Notes/Comments:
|
| 35.16 | FILTERS CHANGED 3-12-97 | FABSIX::E_DAWSON | | Wed Mar 12 1997 12:33 | 6 |
|
Filters were changed on both slurry tanks.
SIZE :
Tungsten Slurry Filter = .10 micron
Oxide Slurry Filter = .1 micron
|
| 35.17 | CMP.C1 MQC 3-14-97 | FABSIX::E_DAWSON | | Fri Mar 14 1997 09:58 | 35 |
| W-CMP MQC DATA SHEET Date: 3-14-97
Time: 09:55 hrs
Name: Earl Dawson
-> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = 2164
Tungsten %Standard Deviation = 169 - 3.9%
Tungsten Range = 689
Oxide removal rate(Ang/min) = 20
Oxide %Standard Deviation = 6
Oxide Range = 25
Selectivity W:Oxide = W-RR/OxRR = 108
-> Secondary Platen Difference Map(2 minute polish):
Oxide removal rate(Ang/min) = 1083
Oxide Standard Deviation = 169
Oxide Range = 816
Defectivity: Pre Post Delta
Sum of all Defects = 251
Large(0.7-10um) = 69
Scratch Length(mm) = 0
-> Integrated Process(Primary to endpoint + Secondary Buff)
Defectivity: Pre Post Delta
Sum of all Defects = 587
Large(0.7-10um) = 128
Scratch Length(mm) = 0
Wafer counts: Primary Table = na
Secondary Table = na
Notes/Comments:
|
| 35.18 | IONIC CONT. TEST 3-13-97 | FABSIX::E_DAWSON | | Fri Mar 14 1997 14:01 | 96 |
| NH4OH Basline:
--------------
- Pump 5L of DI through scrubber manifold........................DONE
- Submit 1 virgin oxide wafer as control.........................DONE
MU2Y792 SLOT 1, BOX 1
- Baseline scrubber with oxide monitor(No chemicals).............DONE
MN2Y7F2 SLOT 3, BOX 1
- Baseline scrubber with oxide monitor with NH4OH................DONE ~30 SEC
MP2Y7E2 SLOT 5, BOX 1
- Baseline POR(WCMP{clear&60sec} + 30s Ox buff + NH4OH scrub)....DONE ~30 SEC
M132012 SLOT 7, BOX 1
- Pump 5L of DI through scrubber manifold........................DONE
Acetic scrubber test:
---------------------
- Baseline scrubber with oxide monitor(No chemicals).................DONE
MW2Y772 SLOT 9, BOX 1
- Process 3 "clean" dummy oxide wafers through scrubber with Acetic..DONE
- Baseline scrubber with oxide monitor with Acetic...................DONE
ME2Y7P2 SLOT 11, BOX 1
- Baseline (WCMP{clear&60sec} + 30s Ox buff + Acetic scrub).......DONE
M032022 SLOT 13, BOX 1
- Pump 5L of DI through scrubber manifold............................DONE
Citric Scrubber test:
---------------------
- Baseline scrubber with oxide monitor(No chemicals).................DONE
MK2Y712 SLOT 15, BOX 1
- Process 3 "clean" dummy oxide wafers through scrubber with Citric..DONE
- Baseline scrubber with oxide monitor with Citric...................DONE
MT2Y8S2 SLOT 17, BOX 1
- Baseline (WCMP{clear&60sec} + 30s Ox buff + Citric scrub).......DONE
MA31YU2 SLOT 19, BOX 1
- Pump 5L of DI through scrubber manifold............................DONE
WATER Pad test:
---------------
- Baseline scrubber with oxide monitor without chemicals..............DONE
MQ2Y8V2 SLOT 21, BOX 1
- process 3 dummies using WATER on final pad(use spray bottle for 30s)
with KOH oxidebuff..................................................DONE
- process a monitor through WCMP{clear&60sec} + WATER on final pad(use spray
bottle for 30s) with KOH oxidebuff...DI water scrub only..........DONE
MB31YT2 SLOT 23, BOX 1
- process a monitor through WCMP{clear&60sec} + WATER on final pad(use spray
bottle for 30s) WITHOUT KOH oxidebuff...DI water scrub only...........DONE
MF31YP2 SLOT 25, BOX 1
- Pump 5L of DI through scrubber manifold.............................
Acetic Pad test:
----------------
- Baseline scrubber with oxide monitor without chemicals..............DONE
M72X5Y2
- process 3 dummies using Acetic acid on final pad(use spray bottle for 30s)
with KOH oxidebuff..................................................DONE
- process a monitor through WCMP{clear&60sec} + Acetic acid on final pad(use
spray bottle for 30s) with KOH oxidebuff...DI water scrub only.....DONE
MG31YN2
- process a monitor through WCMP{clear&60sec} + Acetic acid on final pad(use
spray bottle for 30s) WITHOUT KOH oxidebuff...DI water scrub only....DONE
MJ31YK2
- process a monitor through WCMP{clear&60sec} + Acetic acid on final pad(use
spray bottle for 30s) with KOH oxidebuff...Acetic acid scrub.........DONE
(note 3 dummies processed through scrubber with Acetic prior to this wafer)
MB31XB2
- Pump 5L of DI through scrubber manifold.............................DONE
Citric Pad test:
- Baseline scrubber with oxide monitor(No chemicals)...................DONE
MC2X4B2
- process 3 dummies using Citric acid on final pad(use spray bottle for 30s)
with KOH oxidebuff...................................................DONE
- process a monitor through WCMP{clear&60sec} + Citric acid on final pad(use
spray bottle for 30s) with KOH oxidebuff...DI water scrub only.......DONE
MD31YR2
- process a monitor through WCMP{clear&60sec} + Citric acid on final pad(use
spray bottle for 30s) WITHOUT KOH oxidebuff...DI water scrub only....DONE
M931YV2
- process a monitor through WCMP{clear&60sec} + Citric acid on final pad(use
spray bottle for 30s) with KOH oxidebuff...Citric acid scrub.........DONE
(note 3 dummies processed through scrubber with Citric prior to this wafer)
ME31YQ2
- Pump 5L of DI through scrubber manifold.............................DONE
- RAN W-wafer to endpoint & had a 2 min ox buff (di water)
MA536N2
- Ran W-wafer to endpoint/no buff/ citric scrub, ran ox buff post.
M931F42
|
| 35.19 | CMP.C1 OX-FILTER CHANGED | FABSIX::E_DAWSON | | Sat Mar 15 1997 15:11 | 6 |
|
CMP.C1 Oxide slurry filter changed from a 1 micron to a 10 micron.
Filter was cloged which created a dead spot in the line, stopping the
pump.
ed
|
| 35.20 | PANW PAD TEST | FABSIX::E_DAWSON | | Sat Mar 15 1997 15:13 | 80 |
| 3-14-97 PANW PAD TEST
---------------------
- MQCed system:
Primary pad 2 min polish:
W-removal rate = 3354�/min; %stddev = 2.6% range = 777�
Ox removal rate= 10�/min; range = 32�
Final Pad 2 min polish:
Ox removal rate = 1041 stddev= 302� range= 32�
Ox particles = 195-total/ 30-large/ 0-scratches
Integrated Process particles: 691-total/110-large/0-scratches
-----------------------------------
- POLISH CONDITIONS
PHASE 1, 7 SEC, 225 FLOW, 2.3 PSI, 61 TEMP, C=37, T=61
PHASE 2, 2 MIN, 200 FLOW, 5.1 PSI, 61 TEMP, C=37, T=61
PAHSE 3, 5 SEC, 225 FLOW, 0.0 PSI, 61 TEMP, C=17, T=61
-----------------------------------
- FIRST RUN -
---------
- ~ 40 WAFERS ON THE PAD
- 20 LITERS OF W-SLURRY MIXED
- 25 OX-MONITORS RAN ON PRIMARY PAD
- W-SLURRY TANK HAND MIXED
- W-MONITOR & OXIDE MQC MONITOR RAN FOR 2 MIN ON PRIMARY PAD.
- NO W-MONITORS RAN BEFORE MQC MONITOR.
- Primary pad 2 min polish:
W-removal rate = 2662�/min; %stddev = 12.9% range = 2856�
Ox removal rate= 16�/min; range = 121�
* POINTS WERE TO SMALL TO CALCULATE
SELECTIVITY = 166-1
-----------------------------------
- SECOND RUN -
----------
- ~ 67 WAFERS ON THE PAD
- 25 OXIDE MONITORS RAN ON PRIMARY PAD
- W-SLURRY TANK HAND MIXED
- W-MONITOR & OXIDE MQC MONITOR RAN FOR 2 MIN ON PRIMARY PAD.
- NO W-MONITORS RAN BEFORE W-MQC.
- Primary pad 2 min polish:
W-removal rate = 2671�/min; %stddev = 5.38% range = 289�
Ox removal rate= 17�/min; range = 135�
SELECTIVITY = 157-1
------------------------------------
- THIRD RUN -
---------
- ~ 95 WAFERS ON THE PAD
- 10 OXIDE MONITORS RAN ON PRIMARY PAD
- DRAINED W-SLURRY TANK
* 3/15/97 *
- 20 LITERS OF W-SLURRY MIXED
- 12 OXIDE MONITORS RAN ON PRIMARY PAD
- 3 W-MONITORS PRIOR TO W-MQC.**********
- W-SLURRY TANK HAND MIXED
- W-MONITOR & OXIDE MQC MONITOR RAN FOR 2 MIN ON PRIMARY PAD.
- Primary pad 2 min polish:
W-removal rate = 2757�/min; %stddev = 5.68% range = 313�
Ox removal rate= 15�/min; range = 154�
SELECTIVITY = 183-1
-------------------------------------
- FOURTH RUN -
----------
- ~ 122 WAFERS ON THE PAD
- 17 OXIDE MONITORS RAN ON PRIMARY PAD
- 3 W-MONITORS PRIOR TO W-MQC.**********
- W-SLURRY TANK HAND MIXED
- W-MONITOR & OXIDE MQC MONITOR RAN FOR 2 MIN ON PRIMARY PAD.
- Primary pad 2 min polish:
W-removal rate = 2725�/min; %stddev = 6.24% range = 340�
Ox removal rate= 18�/min; range = 70�
SELECTIVITY = 151-1
**** ~144 WAFERS ON THIS PAD....RAN OUT OF BI-PLANAR SLURRY
-------------------------------------
|
| 35.21 | CMP.C1 MQC 3/19/97 | FABSIX::E_DAWSON | | Wed Mar 19 1997 14:34 | 36 |
| W-CMP MQC DATA SHEET Date: 3-19-97
Time: 14:00 hrs
Name: Earl Dawson
-> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = 2721
Tungsten %Standard Deviation = 11.7
Tungsten Range = 642
Oxide removal rate(Ang/min) = 15
Oxide %Standard Deviation = 9.6
Oxide Range = 45
Selectivity W:Oxide = W-RR/OxRR = 181-1
-> Secondary Platen Difference Map(2 minute polish):
Oxide removal rate(Ang/min) = 956
Oxide Standard Deviation = 263
Oxide Range = 1430
Defectivity: Pre Post Delta
Sum of all Defects = 733
Large(0.7-10um) = 3272....FINGER PRINT
Scratch Length(mm) = 0
-> Integrated Process(Primary to endpoint + Secondary Buff)
Defectivity: Pre Post Delta
Sum of all Defects = 170
Large(0.7-10um) = 1199
Scratch Length(mm) = 1.61
Wafer counts: Primary Table = ~251
Secondary Table =
Notes/Comments:
|
| 35.22 | CMP.C1 MQC 3-26-97 | FABSIX::E_DAWSON | | Wed Mar 26 1997 11:13 | 36 |
| W-CMP MQC DATA SHEET Date: 3-26-97
Time: 10:00 hrs
Name: Earl Dawson
-> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = 2278
Tungsten %Standard Deviation = 11.1
Tungsten Range = 1764
Oxide removal rate(Ang/min) = 13
Oxide %Standard Deviation = 10
Oxide Range = 49
Selectivity W:Oxide = W-RR/OxRR = 164-1
-> Secondary Platen Difference Map(2 minute polish):
Oxide removal rate(Ang/min) = 1069
Oxide Standard Deviation = 240
Oxide Range = 854
Defectivity: Delta
Sum of all Defects = 5284
Large(0.7-10um) = 933
Scratch Length(mm) = 1.35
-> Integrated Process(Primary to endpoint + Secondary Buff)
Defectivity: Delta
Sum of all Defects = 13689
Large(0.7-10um) = 4272
Scratch Length(mm) = 0
Wafer counts: Primary Table = 9
Secondary Table = 8
Notes/Comments:
|
| 35.23 | OXIDE FILTER CHANGE | FABSIX::E_DAWSON | | Thu Mar 27 1997 13:49 | 4 |
|
Oxide slurry tank drained (3/26). Pump cycled wiht di water, tank
scrubed and rinsed. New 10 micron filter installed. New sc12 slurry in
oxide tank.
|
| 35.24 | POLYTEX PAD CHANGE | FABSIX::E_DAWSON | | Thu Mar 27 1997 14:36 | 1 |
| Polytex Pad replaced on Cmp.C1 Lot #6BK-EC5E.
|
| 35.25 | CMP.C1 MQC 3-27-97 | FABSIX::E_DAWSON | | Thu Mar 27 1997 15:07 | 38 |
| W-CMP MQC DATA SHEET Date: 3-27-97
Time: 15:00 hrs
Name: Earl Dawson
-> Primary Platen Difference Maps(2 minute polish):
Tungsten removal rate(Ang/min) = 2265
Tungsten %Standard Deviation = 6.1%
Tungsten Range = 1044
Oxide removal rate(Ang/min) = 11
Oxide %Standard Deviation = 10
Oxide Range = 41
Selectivity W:Oxide = W-RR/OxRR = 206-1
-> Secondary Platen Difference Map(2 minute polish):
Oxide removal rate(Ang/min) = 1013
Oxide Standard Deviation = 196
Oxide Range = 862
Defectivity: Delta
Sum of all Defects = 3693
Large(0.7-10um) = 551
Scratch Length(mm) = 3.25
-> Integrated Process(Primary to endpoint + Secondary Buff)
Defectivity: Delta
Sum of all Defects = 4804
Large(0.7-10um) = 1135
Scratch Length(mm) = 9.85
Wafer counts: Primary Table = 18
Secondary Table = 7
Notes/Comments: SCRUBBER MQC'S
- PRE 1-12-0
- PST 92-2736-0
- DELTA 91-2724-0
|
| 35.26 | Conditioning Testing | SUBPAC::DANOCONNOR | | Wed May 07 1997 17:42 | 8 |
| Conditioning testing of Westec system performed
Run 1 Westec std POR 3459 5.86%
Run 2 Westec No Air Brush 3378 4.59%
Run 3 Westec Water Cond 30 sec & Air Brush 2482 5.27%
/DRO
|
| 35.27 | Carrier & Pad Change 5/13/97 | FABSIX::E_DAWSON | | Wed May 14 1997 10:39 | 3 |
|
Carrier, Primary, and Secondary pads changed. 5/13/97
/eral
|
| 35.28 | CMP.C1 W-SLURRY FILTER CHANGE | SUBPAC::DAWSON | | Fri May 16 1997 16:51 | 5 |
|
Filter changed in w-slurry tank after cabot slurry test. .5uM
filter replaced.
/earl
|
| 35.29 | CABOT SLURRY TEST | SUBPAC::DAWSON | | Wed May 28 1997 10:25 | 66 |
|
PHASE 1:
- Strip the Westech and install new pads and carrier(DF200)...DONE
- Drain both slurry tanks. CLOSE supply and return lines to the Auriga so
we don't have to fill that volume with slurry.....DONE
- Fill Oxide tank with SC112....DONE
- Mix ~1L of Cabot slurry 1:1 (WA400-3%:Fe400-5%). dump into W slurry tank and
circulate through lines and dump slurry....DONE
LITER WOULD NOT PUMP OUT OF LINES.
- Mix ~8L of slurry 1:1 and put in W slurry tank.....DONE
4 LITERS OF W400 / 4 LITERS OF Fe400, APPX ~9 LITERS
- Process 4-5 dummy wafers on primary platen followed by 1um W monitor and
12kA oxide wafer for 2 min. Record removal rate and uniformity....DONE
CONDITION = 3/W WAFERS/175ML ALL 3 PHASES FOR 30 SEC 37/61/5.1
1/W WAFER 60 SEC 1UM/12K FOR 120 SEC 175ML 37/61/5.1
W/RR = 4201/2100� MIN 21.78% UNF.
OX/RR= 37/18� MIN R=70 STD = 16�
SELECTIVITY = 117�
- Process 4-5 dummy wafers on secondary pad followed by 1 12kA for 2 min to
check removal rate/ uniformity, and particles....DONE
CONDITION = OX WAFERS/ 250ML PHASE 1 190ML PHASE 2 FOR 60 SEC
3/OX WAFERS 60 SEC 2/OX WAFERS FOR 2 MIN
OX RR = 2094/1047� MIN 308� STD
PARTICLES DELTA = 96-123-0 (9500 RECIPE)
WCMP RECIPE USED ON SCRUBBER
- Process 1 5.7kA wafer through FPM for particles.....DONE
CONDITION = 5700� W/WAFER 175ML 37/61/5.1 30 SEC OX/BUFF
PARTICLE DELTA = 190-588-0 (8000� URECIPE)
WCMP RECIPE USED ON SCRUBBER
- If particles are exceptional and selectivity very good process a contact
patterned wafer from YD0161 through the FPM flow and save for AFM/SEM...DONE
CONDITION = 4 MIN TO CLEAR 30 SEC OX BUFF/WCMP SCRUBBER RECIPE USED
- Run more wafers and check removal rate/ uniformity on primary platen at the
end of the slurry batch.....DONE...4654/2326 RR 25.7% UNF.
**** NO CITRIC WAS USED TO CLEAN ANY OF THE WAFERS. ****
--------------------------------------------------------------------------------
5/27/97 PHASE 2
- Slurry Flow @ 175ml, 188mm, .53%Al, 7.9%Fe
MQC = 37T / 61C / 4.1 PSI
WW/RR = 1572/22% OX/RR = 14�/2 = 7� SEL = 225-1
TEST# table carrier press. rr unf rng.
1. 17 57 4.0 1045 30% 1983
2. 17 57 6.0 1243 23% 1742
3. 57 17 4.0 1783 33% 3275
4. 57 17 6.0 2263 30% 3894
5. 37 37 5.0 1686 34% na
5.(180mm) 1267 13% na
6. 37 61 4.1 1786 23% na
|